The SiHB6N80E is an N-channel power MOSFET from Vishay Siliconix designed for high-current applications such as server and telecom power supplies, switch mode power supplies, and industrial systems. It features low on-resistance, ultra-low gate charge, avalanche energy rating, and reduced switching losses, making it highly efficient for various power management tasks. The device includes a TO-263 package, RoHS, and halogen-free compliance, suitable for applications requiring high reliability and robustness in demanding environments.
Operating junction temperature range: -55°C to +150°C
Gate charge: 22-44 nC
Drain-source on-resistance: 0.82 Ω typical
Avalanche energy rating: 95 mJ
Maximum junction-to-ambient thermal resistance: 62°C/W
Maximum junction-to-case thermal resistance: 1.6°C/W
Maximum drain-source voltage slope: 70 V/μs
Reverse diode forward voltage: 1.2 V at 3A
Max gate voltage: +30 V
Soldering temperature (10s): 300°C
Buy the Vishay SiHB6N80E – Reliable Power MOSFET for Industrial Applications
Purchase the Vishay SiHB6N80E power MOSFET online today to ensure your industrial, telecom, or power supply projects benefit from low Rds(on), high current capacity, and excellent thermal performance. This high-voltage N-channel MOSFET offers robust features such as avalanche energy rating, low gate charge, and a durable TO-263 package, making it ideal for demanding applications. Secure your supply chain by buying this reliable component online and enjoy fast delivery, high quality, and technical support for your critical projects.
Buy Vishay SiHB6N80E now and experience unmatched reliability and high-performance power management in industrial systems.
Frequently Asked Questions
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