The Vishay Siliconix SiHD690N60E is a high-performance N-channel power MOSFET designed for versatile industrial and consumer applications. Featuring a 600V drain-source voltage, low on-resistance of 0.60Ω at Vgs = 10V, and a maximum drain current of 4.0A at 100°C, it provides efficient switching with reduced losses. Its thermally robust package (DPAK) supports high junction temperatures up to 150°C, making it suitable for server power supplies, motor drives, and solar inverters. The device's low gate charge and avalanche energy rating enhance overall reliability in demanding electronics environments.
Vishay SIHD690N60EGE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage: 600V
Gate-source voltage: ±30V
Continuous drain current: 4.0A at 100°C
Pulsed drain current: 14A
Maximum power dissipation: 62.5W
Operating junction temperature range: -55°C to +150°C
Maximum junction-to-ambient thermal resistance: 62°C/W
Maximum junction-to-case thermal resistance: 2.0°C/W
Gate charge: 8-12nC
Drain-source on-resistance: 0.60Ω (Vgs=10V)
Avalanche energy: 9mJ
Soldering temperature: 260°C for 10s
Package: DPAK (TO-252)
Body dimensions: Length 6.40–6.73mm, Width 6.00–6.22mm, Height 9.40–10.40mm.
Buy the Vishay Series E Power MOSFET: SiHD690N60E
Enhance your electronics projects with the Vishay Series E power MOSFET SiHD690N60E. With 600V drain-source voltage and 4A current capacity, it provides efficient switching for power supplies, motor drives, and solar inverters. Its low on-resistance and gate charge ensure minimal losses and fast switching speeds, improving overall system efficiency. The robust DPAK package supports high temperatures up to 150°C, making it ideal for demanding industrial applications. Order online now to get dependable quality and quick delivery.
Order your Vishay Series E power MOSFET SiHD690N60E today and ensure reliable performance for industrial and switching applications.
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