The Vishay SiHG186N60EF is a high-voltage N-channel MOSFET designed for switching applications such as server and telecom power supplies, lighting, industrial equipment, and motor drives. It features low on-resistance, fast switching capabilities, and a robust avalanche energy rating, making it suitable for high-efficiency power conversion circuits. This device comes in a TO-247AC package and complies with RoHS standards, ensuring environmentally friendly manufacturing and performance reliability in demanding industrial environments.
Vishay SIHG186N60EFGE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage: 600 V
Gate-source voltage: ±30 V
Continuous drain current at 25°C: 8.4 A
Maximum power dissipation: 156 W
Junction temperature range: -55°C to +150°C
Maximum drain-source on-resistance: 0.168 Ω
Gate charge: 24 to 32 nC
Reverse diode continuous current: 18 A
Reverse recovery charge: 6 to 12 μC
Capacitance (Coss): 52 pF, (Cgs): 1081 pF
Thermal resistance (junction to case): 38 K/W
Thermal resistance (junction to ambient): 65 K/W
Peak diode recovery dv/dt: 50 V/μs
Soldering temperature: 260°C for 10 seconds
Buy the Buy Vishay SiHG186N60EF Part Number SIHG186N60EFGE3 Online
Purchase the Vishay SiHG186N60EF high-voltage N-channel MOSFET online today and benefit from its low Rds(on), fast switching, and high avalanche energy ratings. This power transistor is ideal for server, telecom, lighting, industrial, and motor drive applications, enabling efficient power management and excellent thermal stability. With a TO-247AC package, RoHS compliance, and proven reliability, this MOSFET guarantees superior performance and durability for your critical power circuits. Order now to leverage top-tier quality and availability for your engineering projects.
Buy Vishay SiHG186N60EF high-voltage N-channel MOSFET now and experience unmatched reliability and performance in power switching and industrial drives.
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