The Vishay Siliconix SiHG21N80AE is an N-channel power MOSFET featuring a TO-247AC package, ideal for server and telecom power supplies, switch mode power supplies, lighting, motor drives, and solar inverters. It offers a low Rds(on), high avalanche energy capability, and RoHS and halogen-free compliance, ensuring reliable performance in demanding applications. Its high Vds (800V) and high continuous drain current support efficient switching and protection in industrial and consumer electronics, with specifications suitable for high voltage, high current, and energy-efficient operations.
Vishay SIHG21N80AEGE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage Vos: 800 V
Gate-source voltage Ves: ±30 V
Continuous drain current at 100°C: 4 A
Pulsed drain current: 38 A
Maximum power dissipation: 32 W
Operating junction temperature range: -55 to +150 °C
Drain-source on resistance Rds(on): 0.205 Ω (typical at 10 V Vgs)
Gate threshold voltage Vgs: 2.0 to 40 V
Total gate charge Qg: 72 nC
Gate-source charge Qs: 9 nC
Gate-drain charge Qgd: 22 nC
Package: TO-247AC, lead (Pb)-free, halogen-free
Maximum junction-to-ambient thermal resistance RθJA: 40 °C/W
Maximum junction-to-case resistance RθJC: 0.7 °C/W
Reverse diode continuous current: 17.4 A
Reverse diode forward voltage: 1.2 V at 11 A
Reverse recovery time: 400 ns
Reverse recovery charge: 10 μC
Buy the Vishay Series Power MOSFET: SiHG21N80AE
Secure your Vishay SiHG21N80AE power MOSFET online today. Designed for high-voltage, high-current applications such as power supplies, lighting, and industrial systems, this device offers excellent durability, low Rds(on), and energy efficiency. Its robust construction ensures reliable operation in demanding environments. Purchase now to leverage industry-leading technology, RoHS and halogen-free compliance, and quick delivery, ensuring your projects stay on schedule with maximum performance and longevity.
Buy Vishay SiHG21N80AE now and experience unmatched reliability and performance in high-voltage switching applications.
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