The Vishay Siliconix SiHH120N60E is a high-performance N-Channel Power MOSFET designed for switch mode power supplies, server and telecom power applications, lighting, induction heating, motor drives, and solar inverters. Featuring 4th generation E series technology, it offers low R<sub>on</sub>, reduced switching losses, avalanche energy rating, and RoHS compliance. With a drain-source voltage of 600 V, continuous drain current of 15 A at 150°C, and low gate charge, this device ensures efficient power switching and reliability in demanding environments.
Maximum junction-to-case resistance: 0.57 Ω (typ), 0.80 Ω (max)
Static drain-source breakdown voltage: 600 V
Gate threshold voltage: 3.0 - 5.0 V
Gate-source leakage: less than 1 nA at 30 V
On-state resistance R<sub>ds(on)</sub>: 0.106 Ω at 10 V, 12 A
Total gate charge: 44 nC
Reverse diode forward voltage: 1.2 V at 12 A
Maximum avalanche energy: 56 mJ
Package Type: PowerPAK 8 x 8
Buy the Vishay SiHH120N60E – Reliable N-Channel MOSFET for Industrial Applications
Get the Vishay Siliconix SiHH120N60E today and enhance your power electronics with this high-voltage, efficient N-channel MOSFET. Designed for switch mode power supplies, motor drives, solar inverters, and lighting, it offers 600 V drain-source voltage, low R<sub>on</sub>, and excellent thermal performance. Featuring robust avalanche energy ratings and RoHS compliance, this device ensures reliable operation even in demanding environments. Buy online now for fast delivery and high-quality power switching components to support your industrial, automotive, or renewable energy projects.
Order your Vishay Series SiHH120N60E powerful MOSFET today and ensure reliable, efficient power control in your industrial systems and renewable energy projects.
Frequently Asked Questions
Where can I buy Vishay SIHH120N60ET1GE3?
You can click on the BUY or RFQ button to purchase SIHH120N60ET1GE3 from an authorized Vishay distributor.
How do I troubleshoot issues or seek technical support for part SIHH120N60ET1GE3?