The Vishay SiHPO52N60EF is a high-performance N-channel power MOSFET optimized for server, telecom, industrial, and lighting applications, featuring fast body diode, low on-resistance, and avalanche energy rating. It provides efficient switching with low gate charge and excellent thermal stability, making it suitable for switch mode power supplies, motor drives, and solar inverters. The device comes in a TO-220AB package, with a drain-source voltage of 600V, continuous drain current up to 31A at 100°C, and a maximum junction temperature of 150°C, ensuring reliable operation in demanding environments.
Vishay SIHP052N60EFGE3 Power MOSFET Specifications:
Drain-source voltage: 600 V
Gate-source voltage: ±30 V
Continuous drain current: 31 A at 100°C
Pulsed drain current: 148 A
Maximum power dissipation: 278 W
Operating junction temperature: -55°C to +150°C
Thermal resistance, junction-to-ambient: max 62°C/W
Gate charge: 101 nC
Drain-source on-resistance: typ 0.045 Ω at Vgs=10 V
Maximum avalanche energy: 353 mJ
Soldering peak temperature: 260°C for 10 seconds
Body diode continuous current: 48 A
Reverse recovery time: 148 ns
Capacitance, Ciss: 3380 pF
Body diode forward voltage: 1.2 V at 23 A
Buy the Buy Vishay SiHPO52N60EF Part Number SIHP052N60EF Online
Purchase the Vishay SiHPO52N60EF online today to benefit from its high voltage capacity, low on-resistance, and rapid switching features. Ideal for power supplies, motor drives, and industrial control systems, this MOSFET guarantees exceptional performance and thermal stability in demanding environments. With a robust TO-220AB package, it delivers up to 31A continuous current at 100°C and handles 600V drain-source voltage, making it a reliable choice for solar inverters, induction heating, and LED lighting. Experience seamless online buying and enhance your electronic projects with Vishay's trusted quality.
Buy Vishay SiHPO52N60EF now and ensure high reliability and efficient power switching for industrial and power supply applications.
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