The Vishay Siliconix SiHU5N80AE is an N-Channel Power MOSFET optimized for high-voltage switching applications such as server and telecom power supplies, industrial welding, induction heating, motor drives, and renewable energy systems. Featuring ultra-low gate charge, low figure-of-merit (Ron x Qg), and integrated ESD protection, it ensures reduced switching and conduction losses. The device supports a drain-source voltage of up to 800 V, with a continuous drain current of 2.8 A at 100°C, making it suitable for high-power, high-efficiency applications with excellent thermal stability and durability.
Vishay SIHU5N80AEGE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage Vos: 800 V
Gate-source voltage Ves: ±30 V
Continuous drain current at 100°C Ves at 10 V: 2.8 A
Pulsed drain current: 7 A
Maximum power dissipation: 62.5 W
Operating junction and storage temperature: -55 to +150 °C
Drain-source on-resistance Rds(on): 117-135 mΩ
Gate charge total Qg: 165 nC
Gate-source charge Qos: 3 nC
Gate-drain charge Qya: 6 nC
Maximum junction-to-ambient thermal resistance Rθja: 62 °C/W
Package: IPAK (TO-251), lead-free and halogen-free
Buy the Vishay Series Power MOSFET: SiHU5N80AE
Purchase the Vishay SiHU5N80AE online today to benefit from its high-voltage capability and ultra-low gate charge, ideal for industrial power supplies, motor drives, and renewable energy applications. This power MOSFET provides reliable, efficient switching with a drain-source voltage of up to 800 V, supporting high-power designs with reduced switching losses and enhanced thermal performance. Ensuring long-lasting durability and superior performance, it’s the perfect choice for engineers seeking robust control components for demanding applications.
Get Vishay SiHU5N80AE today—built for high-voltage switching, low conduction losses, and long-lasting durability in power electronics.
Frequently Asked Questions
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