The Vishay Siliconix SiR440DP is a high-performance N-Channel MOSFET in PowerPAK SO-8 package, rated for 20 V drain-source voltage and handling continuous drain currents up to 37 A. It features low Rds(on) of 0.00155 Ω at Vgs=10 V, suitable for high current and switching applications such as telecom, de-de, and OR-ing designs. This halogen-free device ensures robust thermal management with a maximum junction temperature of 150°C, and it complies with RoHS standards, making it ideal for efficient, reliable power management in modern electronics.
Operating Junction Temperature Range: -55°C to 150°C
On-State Resistance: 0.00155 Ω at Vgs=10 V
Gate Threshold Voltage: 1.0 to 2.5 V
Total Gate Charge: 100-150 nC
Body Diode Forward Voltage: 0.72 V at 5 A
Reverse Recovery Time: 43 ns
Thermal Resistance Junction-to-Ambient: 20 °C/W
Package: PowerPAK SO-8
Buy the Vishay Series PowerPAK SO-8 N-Channel MOSFET: SIR440DPT1GE3
Order the Vishay Siliconix SIR440DPT1GE3 online today and benefit from a reliable, high-performance N-Channel MOSFET designed for power switching, telecom, and industrial applications. This halogen-free device provides low Rds(on) of 0.00155 Ω at 10 V, high pulsed current capacity, and excellent thermal management in a compact PowerPAK SO-8 package. Perfect for high-current circuits demanding efficiency, durability, and RoHS compliance, it ensures your designs operate smoothly under demanding conditions while simplifying assembly with minimal thermal resistance.
Get Vishay Siliconix SIR440DPT1GE3 today—built for high current, low Rds(on), and reliable power switching in compact packaging.
Frequently Asked Questions
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