The Vishay Siliconix SIR668ADP-T1-RE3 is a high-performance N-channel MOSFET designed for applications requiring efficient switching and low on-resistance. Featuring a PowerPAK SO-8 package, it offers a drain-source voltage of 100 V, continuous drain current of 18.3 A, and low gate charge, making it suitable for DC/DC converters, power supplies, motor drives, and load switches. It meets RoHS standards, providing a reliable choice for demanding electronic systems with excellent thermal performance and robustness.
Operating junction temperature range: -55°C to +150°C
Thermal resistance junction-to-ambient: 20 °C/W
Gate threshold voltage: 2 - 4 V
Drain-source resistance (Rds(on)): 0.0054 Ω at Vgs = 7.5 V, 15 A
Body diode voltage: 0.73 V at 5 A
Soldering peak temperature: 260°C
Single pulse avalanche energy: 612 mJ
Buy the Vishay Series PowerPAK SO-8 N-Channel MOSFET: SIR668ADP-T1-RE3
Purchase the Vishay SIR668ADP-T1-RE3 N-channel MOSFET online today. Designed for efficient power switching, it features low Rds(on), high current capacity, and RoHS compliance. Its PowerPAK SO-8 package ensures excellent thermal performance and reliability in applications such as power supplies, motor control, and load switching. With a drain-source voltage of 100 V and continuous drain current of 18.3 A, this MOSFET offers optimal efficiency and durability, making it an essential component for modern electronic systems. Shop now to ensure your project benefits from Vishay’s quality engineering.
Get Vishay SIR668ADP-T1-RE3 today—built for precision and long-lasting durability in power switching applications.
Frequently Asked Questions
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