The Vishay Siliconix SIRA88DPT1GE3 is a high-performance N-Channel MOSFET designed for various industrial applications such as DC/DC conversion, load switching, motor control, and battery protection. It features a PowerPAK SO-8 package, ultra-low Rds(on), high current capacity, and robust thermal characteristics. Its trenchFET technology ensures efficient switching performance, making it suitable for demanding power management tasks. The device operates within a voltage range up to 30 V, with excellent reliability and minimal conduction losses, ideal for compact, high-efficiency power solutions.
Vishay SIRA88DPT1GE3 N-Channel Power MOSFET Specifications:
Package: PowerPAK SO-8
Drain-source voltage Vos: 30 V
Gate-source voltage Ves: +20, -16 V
Continuous drain current (Tj=150°C): 7.2 A
Maximum pulsed drain current: 22.7 A
Maximum power dissipation: 1.6 W
Operating junction temperature: -55 to +150 °C
Thermal resistance junction-to-ambient: Maximum 37°C/W
Gate threshold voltage: 1 to 24 V
On-state resistance Rds(on): Typical 0.0067 Ω at Vgs=10V
Gate charge Qg: 28 nC
Body diode forward voltage: 0.77 V at 5A
Soldering temperature (peak): 260°C
Reverse recovery charge: 140 nC
Body diode reverse recovery time: 48-96 ns
Buy the Vishay SIRA88DPT1GE3 – Reliable PowerMOSFET for Industrial Applications
Enhance your power management system with the Vishay Siliconix N-Channel MOSFET. Designed for high-current switching, low Rds(on), and excellent thermal performance, this device is ideal for DC/DC converters, motor drivers, and battery protection in industrial equipment. The PowerPAK SO-8 package ensures easy integration into compact designs. Its reliable, high-efficiency operation reduces energy losses and thermal stress, providing long-term durability. Purchase online today to optimize your electronic systems with this robust, high-performance power MOSFET.
Buy Vishay SIRA88DPT1GE3 now and experience unmatched reliability and performance for your power switching needs.
Frequently Asked Questions
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