Vishay SIRC04DPT1GE3 PowerMOSFET with Schottky Diode
The Vishay Siliconix SIRC04DPT1GE3 is a high-efficiency N-Channel PowerMOSFET with integrated Schottky diode, designed for synchronous buck and rectification applications. Featuring a 30 V drain-source voltage, low R_DS(on), and high current handling capacity, this PowerPAK SO-8 package ensures reliable performance in compact designs. The device is RoHS compliant, halogen-free, and undergoes 100% R_y and UIS testing, making it suitable for power conversion and load switching in modern electronic systems. Its efficient thermal characteristics enable high power dissipation with minimal cooling requirements.
Vishay SIRC04DPT1GE3 PowerMOSFET with Schottky Diode Specifications:
Drain-source voltage: 30 V
Gate-source voltage: +20 V, -16 V
Continuous drain current: 26.9 A at 150°C
Pulsed drain current: 100 A (t=300 us)
Power dissipation: 3.25 W
Maximum operating junction temperature: -55°C to +150°C
Maximum junction-to-ambient thermal resistance: 20 °C/W
Maximum junction-to-case thermal resistance: 1.9 °C/W
Body diode forward voltage: 0.45 V at 5 A
Reverse recovery time: 38 ns
Gate charge: 166 nC
Gate resistance: 0.4 to 2 Ω
Soldering temperature (peak): 260°C
Package: PowerPAK SO-8 single, RoHS compliant, halogen-free
Buy the Vishay Series PowerPAK SO-8 N-Channel 30 V MOSFET: SIRC04DPT1GE3
Purchase the Vishay Series PowerPAK SO-8 N-Channel MOSFET with integrated Schottky diode today for efficient power switching in your electronic projects. This device’s low R_DS(on), high current capability, and robust thermal performance make it ideal for synchronous buck converters, rectification, and load switching. Its RoHS compliance and halogen-free design meet industry standards. Order online now to add this reliable, compact power solution to your inventory and experience seamless power management in your applications.
Order your Vishay Series PowerPAK SO-8 SIRC04DPT1GE3 today and ensure reliable power switching in your electronic designs with its low R_DS(on) and high current capacity.
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