Dual N-channel MOSFETs engineered for high efficiency power switching applications, including CPU core power, server peripherals, and synchronous buck converters. Featuring Vishay's TrenchFET® Gen IV technology, these devices offer low on-resistance, fast switching times, and high current capabilities. They are RoHS compliant, halogen-free, and tested for Rds(on) and UIS robustness. Ideal for telecom power supplies and high-performance electronic circuits, the SiZ998DT provides reliable operation with a maximum drain-source voltage of 30 V, low gate charge, and excellent thermal performance for demanding scenarios.
Buy the Buy Vishay SiZ998DT Part Number SIZ998DTT1GE3 Online
Purchase the Vishay SiZ998DT dual N-channel MOSFET online to ensure high efficiency and low on-resistance in your electronic projects. With a maximum drain-source voltage of 30 V and high pulsed current capabilities, this device is perfect for CPU power supplies, telecom DC/DC converters, and synchronous buck applications. Its robust design features low gate charge, excellent thermal performance, and RoHS compliance. Reliable and easy to integrate, order today for fast delivery and elevate your power switching designs.
Order your Vishay SiZ998DT high-current dual MOSFET today and enhance your power management circuits with reliable, low on-resistance switching performance.
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