The SUP60020E is a high-performance N-channel MOSFET with an 80 V drain-source voltage, low Rds(on), and a trench technology design for efficient power switching. Featuring a TO-220AB package, it is suitable for power supplies, DC/DC converters, motor drives, and inverter applications. Its low gate charge and excellent thermal stability enable high efficiency and reliability in demanding electronic systems. Crafted with RoHS compliance, this device supports a wide operating junction temperature range up to 175°C, making it ideal for industrial and consumer electronic projects.
Vishay SUP60020EGE3 Power MOSFET device Specifications:
Drain-source voltage Vos: 80 V
Gate-source voltage Ves: +20 V / -20 V
Continuous drain current Ip: 150 A at 70°C, 150 A at 25°C
Pulsed drain current: 500 A
Maximum power dissipation: 125 W at 125°C
Junction-to-ambient thermal resistance: 40°C/W
Junction-to-case thermal resistance: 0.4°C/W
Gate threshold voltage Vestth: 2 V to 4 V
On-state drain resistance Rds(on): 0.00240 Ω at 10 V, 0.00280 Ω at 7.5 V
Total gate charge Qg: 151.2 nC
Reverse recovery time: 80 ns
Peak reverse recovery charge: 0.275 μC
Operating junction temperature range: -55°C to +175°C
Package: TO-220AB, lead (Pb)-free and halogen-free
Buy the Vishay Series SUP60020E N-Channel MOSFET: SUP60020E
Enhance your electronic projects with the Vishay SUP60020E N-channel MOSFET, offering 80 V drain-source voltage, low Rds(on), and excellent thermal stability. Its TO-220AB package ensures easy integration into power supplies, motor drives, DC/DC converters, and inverter systems. Designed with low gate charge and high efficiency in mind, this MOSFET supports demanding industrial and consumer applications. Purchase online today to benefit from optimal performance, reliability, and RoHS compliance in your power management solutions.
Buy Vishay SUP60020E now and experience unmatched reliability and high-performance power switching for your electronic applications.
Frequently Asked Questions
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