The VISHAY HEXFRED ultrafast soft recovery diode operates with 1200 V and 8 A ratings, designed for high-frequency switching and power systems. Featuring advanced epitaxial construction, it offers rapid recovery times of 28 ns, low stored charge, and low recovery current, making it ideal for power supplies, motor drives, and inverter applications. Its low EMI and power loss improve system efficiency while reducing heatsink requirements. Suitable for confined spaces, it provides reliable, high-speed switching performance in demanding power electronics environments.
Operating junction and storage temperature range: -55 to +150°C
Reverse breakdown voltage: 1200 V
Maximum forward voltage: 3.4 V at 16 A
Reverse leakage current: 135 μA at rated voltage and 125°C
Junction capacitance: 20 pF at 200 V
Series inductance: 8.0 nH
Reverse recovery time: 63 ns at 25°C, 106 ns at 125°C
Peak recovery current: 11 A
Thermal resistance junction to case: 17 K/W
Mounting torque: 6.0 kgf·cm
Weight: 0.21 oz
Package: 2L TO-220AC
Buy the VISHAY Series HEXFRED Ultrashort Recovery Diode: VS-HFA08TB120-M3
Purchase the VISHAY HEXFRED ultrafast recovery diode online today for superior high-frequency switching in power electronics. Featuring 1200 V and 8 A ratings, this diode provides rapid recovery times of 28 ns, low reverse recovery charge, and low EMI. Its advanced epitaxial construction guarantees high efficiency and reduced noise in power supplies, motor drives, and inverter systems. With its compact TO-220AC package and RoHS compliance, it ensures reliable operation in demanding environments. Order now to improve your system’s performance with this cutting-edge diode and enjoy fast, efficient delivery.
Order your VISHAY Series HEXFRED VS-HFA08TB120-M3 ultrafast diode today and enhance your power switching performance with reliable, high-speed efficiency.
Frequently Asked Questions
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