This high-performance N-channel enhancement mode MOSFET is designed for efficient power management in industrial electronics. Featuring a 700V drain-source voltage, low on-resistance of 225mΩ at 10V gate, and fast switching capabilities, it suits load switching, power supplies, and automotive applications. Its compact U-DFN2020-6 package and lead-free, RoHS-compliant construction ensure reliability and environmentally friendly operation. With a maximum continuous drain current of 17A and excellent thermal characteristics, this device provides robust performance under demanding conditions for engineers seeking reliable power switching solutions.
DIODES INC. DMN10H220LFDF7 Power MOSFET Specifications:
Drain-Source Voltage: 700 V
Gate-Source Voltage: ±20 V
Continuous Drain Current: 17 A
Maximum Body Diode Forward Current: 22 A
Pulsed Drain Current: 88 A
Avalanche Current: 47 A
Thermal Resistance, Junction to Ambient: 110 °C/W
Total Power Dissipation: 0.7 W
Operating Temperature Range: -55°C to +150°C
Package: U-DFN2020-6 (Type F)
Case Material: Molded Plastic, RoHS and Green compliant
UL Flammability Classification Rating: 94V-0
Electrical Characteristics include a Gate Threshold Voltage of 1.74–2.25 V, On-Resistance max 290 mΩ at 10V Gate, Capacitances, and Gate Charge metrics for switching performance.
Buy the Diodes DMN10H220LFDF – Reliable Power MOSFET for Industrial Applications
Purchase the Diodes DMN10H220LFDF power MOSFET online today and experience a high-voltage, low resistance switching device ideal for power supplies, load switches, and automotive electronics. Its compact U-DFN package, RoHS compliance, and exceptional thermal performance ensure long-lasting durability and reliable operation in demanding industrial applications. Whether designing new power modules or upgrading existing systems, this MOSFET offers the efficiency and robustness needed for modern power management solutions. Order now for fast delivery and optimal performance.
Get Diodes DMN10H220LFDF today—designed for high-voltage switching with low on-resistance and robust thermal management.
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