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DIODES INC. DMN68M7SCT N-Channel Enhancement Mode MOSFET
The DIODES INC. DMN68M7SCT is a next-generation N-channel enhancement mode MOSFET engineered to minimize on-state resistance while maintaining excellent switching capabilities. This makes it a prime choice for high-efficiency power management applications such as motor control, backlighting, and DC-DC converters. The device is halogen-free, antimony-free, and RoHS compliant, ensuring environmental responsibility. It is also suitable for automotive applications requiring specific change control, with qualification to AEC-Q100/101/200 standards available upon request. The DMN68M7SCT offers a BVDSS of 68V, an RDS(ON) of 8.0mΩ at VGS=10V, and a continuous drain current of 100A at TC=25°C, providing robust performance in demanding power applications.
DIODES INC. DMN68M7SCT N-Channel Enhancement Mode MOSFET Specifications:
- BVDSS: 68V
- RDS(ON): 8.0mΩ @ VGS= 10V
- ID @ TC = +25°C: 100A
- UIS: 100% Unclamped Inductive Switch (UIS) Test in Production
- Input Capacitance: 4260pF @ VDS= 30V, VGS= 0V, f = 1.0MHz
- Input/Output Leakage: Low
- Lead-Free Finish: RoHS Compliant
- Halogen and Antimony Free: Green Device
- Case: TO220AB
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Terminal Finish: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 1.85 grams (Approximate)
- Maximum Continuous BodyDiode Forward Current: 100A
- Avalanche Current: 35A
- Avalanche Energy: 183mJ
- Power Dissipation: 125W @ TC = +25°C, 80W @ TC = +70°C
- Thermal Resistance, Junction to Case: 1.0 °C/W
- Operating and Storage Temperature Range: -55 to +150 °C
- Drain-Source Breakdown Voltage: 68V
- Zero Gate Voltage Drain Current: <1µA
- Gate-Source Leakage: <±100nA
- Gate Threshold Voltage: 1.3-3V
- Static Drain-Source On-Resistance: 6.2-8.0mΩ @ VGS= 10V, ID= 20A
- Diode Forward Voltage: 0.7-1.2V @ VGS= 0V, IS= 1A
- Output Capacitance: 430pF
- Reverse Transfer Capacitance: 198pF
- Gate Resistance: 1.75Ω @ VDS= 0V, VGS= 0V, f = 1.0MHz
- Total Gate Charge (VGS= 10V): 72.9nC @ VDD= 30V, ID= 20A
- Total Gate Charge (VGS= 4.5V): 36.0nC
- Gate-Source Charge: 8.0nC
- Gate-Drain Charge: 15.3nC
- Turn-On Delay Time: 6.3ns
- Turn-On Rise Time: 18ns
- Turn-Off Delay Time: 36ns
- Turn-Off Fall Time: 9.7ns
- Reverse Recovery Time: 31.4ns
- Reverse Recovery Charge: 30.1nC
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Frequently Asked Questions
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How do I troubleshoot issues or seek technical support for part DMN68M7SCT?
You can download the DMN68M7SCT datasheet or visit the DIODES INC. website for support.
Who is the manufacturer of DMN68M7SCT?
DIODES INC.