The ZXMN10A07F is an N-channel enhancement-mode MOSFET with low Rds(on) and high-speed switching. Designed for high-efficiency power management, motor control, and switching applications, it features a 100V drain-source voltage, low gate drive, and RoHS compliance. Encased in a SOT23 package, it offers a low on-resistance of 0.76Ω at 10V and supports pulsed current of 35A. Its compact plastic case ensures reliability, making it ideal for modern industrial, power supply, and DC-DC converter applications. Market demand may extend lead times, and product discounts are unavailable.
DIODES INC. ZXMN10A07F N-channel MOSFET Specifications:
Drain-Source Voltage: 100 V
Gate-Source Voltage: +20 V
Continuous Drain Current: 0.7 A at 25°C
Pulsed Drain Current: 35 A
Power Dissipation: 806 mW
Thermal Resistance, Junction to Ambient: 155 °C/W
Operating and Storage Temperature Range: -55 to +150 °C
Case: SOT23
Case Material: Molded Plastic, Green Molding Compound
UL Flammability Rating: 94V-0
Gate Threshold Voltage: Min 2 V, Max 4 V
Static Drain-Source On-Resistance: 0.76Ω at 10V
Input Capacitance: 138 pF
Output Capacitance: 25 pF
Gate Resistance: 2 - 4 Ω
Total Gate Charge: 29.6 nC
Reverse Recovery Time: 60 ns
Junction to Ambient Thermal Resistance: 155 °C/W
Buy the Buy Diodes ZXMN10A07F Part Number ZXMN10A07F Online
Purchase the Diodes ZXMN10A07F N-channel MOSFET online today for your power management, motor control, and switching solutions. With a maximum drain-source voltage of 100V, low on-resistance of 0.76Ω at 10V, and support for pulsed currents up to 35A, this SOT23 package device is ideal for efficient power switching applications. Its high reliability, RoHS compliance, and compact design ensure seamless integration in industrial, DC-DC converters, and power supplies. Drive performance and efficiency today with fast shipping and excellent customer support.
Order your Diodes ZXMN10A07F MOSFET today and enhance your high-efficiency power management and motor control projects with reliable performance.
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