The BGSX44MA12 RF CMOS switch is designed for LTE and WCDMA receive paths, offering low insertion loss, high port-to-port isolation, and supported in a compact 1.6 x 1.6 mm leadless package. Controlled via MIPI RFFE 2.0 interface, it covers 0.1 to 3.8 GHz with high EMI robustness, suitable for cellular mobile devices supporting LTE carrier aggregation. Its small size makes it ideal for space-constrained RF switching applications, delivering reliable performance in multi-mode wireless communication systems.
Package: ATSLP-12-12, 1.6 x 1.6 mm, thickness 0.6 mm
Supply Voltage (VDD): 1.65 - 1.95 V
Control Interface: MIPI RFFE 2.0 compliant
Insertion Loss: 0.45 - 0.90 dB depending on frequency
Port-to-Port Isolation: up to 46 dB
Maximum Input Power: 28 dBm CW
ESD Capability: Class C3 (CDM), Class 2 (HBM)
RoHS/WEEE compliant, leadless plastic package
Operational Temperature Range: -55°C to +150°C
Connector Control: External USID select pin
Application: Cellular mobile devices, LTE carrier aggregation, 4G/3G multimode support
Manufactured with high ESD robustness using Infineon’s MOS technology
Buy the Infineon BGSX44MA12 – Reliable RF Switch for Cellular Applications
Enhance your wireless communication projects with the compact and highly reliable RF switch. This device offers excellent isolation and low insertion loss from 0.1 to 3.8 GHz, ideal for LTE, WCDMA, and multi-mode applications. Its small 1.6 x 1.6 mm leadless package makes it perfect for space-constrained designs. Supported by MIPI RFFE control, it ensures easy integration into modern RF systems. Purchase online today and give your devices the performance they need for superior connectivity and stability.
Order your Infineon BGSX44MA12 RF switch today and upgrade your wireless devices with dependable LTE and WCDMA receive path performance.
Frequently Asked Questions
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