The IRF8734PbF is a HEXFET® Power MOSFET designed for high-efficiency, low-voltage switching applications, notably in synchronous MOSFETs for notebook processor power supplies and isolated DC-DC converters in networking systems. It features very low Rds(on) at 4.5V Vgs, low gate charge, and fully characterized avalanche voltage and current ratings. This lead-free device offers a drain-to-source voltage of 30V, high pulsed drain current of 168A, and power dissipation up to 25W. Its compact SO-8 package allows efficient thermal performance and easy integration into power management modules.
INFINEON IRF8734TRPBF Power MOSFET Specifications:
Drain-to-Source Voltage: 30 V
Gate-to-Source Voltage: ±20 V
Continuous Drain Current at 25°C: 21 A
Continuous Drain Current at 70°C: 7 A
Pulsed Drain Current: 168 A
Power Dissipation at 25°C: 25 W
Power Dissipation at 70°C: 16 W
Thermal Resistance Junction-to-Ambient: 50 °C/W
Threshold Voltage: 1.35–1.80 V
Gate Charge (Qg): 20–30 nC
Avalanche Energy: 216 mJ
Body Diode Forward Voltage: 1.0–1.5 V
Operating Junction Temperature: -55 to +150 °C
Buy the Buy International HEXFET Power MOSFET Part Number IRF8734PbF Online
Purchase the International HEXFET Power MOSFET IRF8734PbF online for high-performance switching applications. This device ensures low Rds(on) and gate charge, making it ideal for notebook processors and networking power modules. Featuring a 30V drain-to-source voltage, pulsed drain current of 168A, and 25W power dissipation, it delivers excellent thermal management within a compact SO-8 package. Easy to install and lead-free, it’s perfect for efficient, reliable, and environmentally conscious power management solutions.
Get International HEXFET Power MOSFET IRF8734PbF today—designed for high efficiency, low Rds(on), and reliable power switching in compact packages.
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