The product is a silicon deep trench PIN diode optimized for low bias current antenna switches in handheld devices. It features very low capacitance at zero volt reverse bias (around 0.19 pF at 1 GHz), low forward resistance (approximately 1.3Ω at 3 mA), and improved harmonic distortion balance. The diode is RoHS compliant with a Pb-free package, designed for high-frequency applications above 1 GHz, ensuring minimal signal loss and high reliability in compact electronic systems.
Thermal Resistance (Junction to soldering point): <90 K/W for BAR90-02ELS, <65 K/W for others
Diode Capacitance: 0.19 pF at Vr=0V, 1 GHz
Reverse Parallel Resistance: 4-35 kΩ at Vr=0V, f=1 GHz
Forward Resistance: 1.3Ω at 3 mA, 100 MHz
Charge Carrier Lifetime: 750 ns
Insertion Loss at 1.8 GHz: approximately 0.11-0.16 dB depending on configuration
Package Options: TSSLP-2-3, TSLP-2-19, TSLP-4-7, designed for surface mounting with precise footprint specifications
Buy the Buy Cinfineon Silicon Deep Trench PIN Diode Part Number BAR9002ELE6327XTMA1 Online
Experience the reliability and high performance of the RF PIN diode designed for advanced antenna switching in handheld devices. This Cinfineon silicon deep trench PIN diode offers extremely low capacitance at 1 GHz, low forward resistance, and superior harmonic distortion balance, making it ideal for RF and high-frequency communication systems. RoHS compliant and available with multiple package options, it ensures long-lasting durability and excellent signal integrity. Purchase online today and enhance your RF system's efficiency with this premium quality device built for high-frequency applications.
Get Cinfineon BAR9002ELE6327XTMA1 today—optimized for RF switching and high-frequency precision.
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