The BAV170 is a silicon low leakage diode array ideal for applications requiring minimal leakage currents. It features medium speed switching times and a Pb-free (ROHS compliant) SOT23 package that is qualified according to AEC Q101 standards. The diode can withstand a reverse voltage of up to 80 V and a peak reverse voltage of 85 V, with a maximum forward current of 200 mA. Its electrical characteristics include a breakdown voltage of 85 V and a forward voltage of approximately 900 mV at 1 mA. Suitable for low-leakage, high-reliability electronic circuits, it is compliant with RoHS and offers thermal resistance below 460 K/W.
Buy the Infineon Series BAV170 Low Leakage Diode Array: BAV170E6327HTSA1
Purchase the Infineon BAV170E6327HTSA1 diode array online today. Perfect for low-leakage, high-reliability circuits, its Pb-free SOT23 package ensures eco-friendliness and compliance. The device supports a maximum reverse voltage of 80 V and a forward current of 200 mA, making it suitable for various electronic applications. Its low capacitance and fast switching times contribute to precision and efficiency. Reliable and qualified under AEC Q101 standards, this diode array is ideal for demanding, safety-critical systems requiring strict quality standards. Buy now for durable, high-performance electronics.
Get Infineon BAV170E6327HTSA1 today—built for high-reliability low leakage applications with Pb-free package and AEC Q101 qualification.
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