The BCR 523 E6327 is an NPN silicon digital bipolar transistor ideal for switching circuits, inverters, and driver applications, featuring built-in bias resistors of 1 kΩ and 10 kΩ. It supports collector-emitter voltage of 50 V and collector-base voltage of 50 V, with a maximum collector current of 500 mA. Designed in RoHS-compliant, Pb-free packages, it handles a total power dissipation of up to 330 mW and operates reliably within junction temperatures of -65°C to 150°C, making it suitable for power management and industrial use.
Collector-emitter saturation voltage: 0.3 V at 50 mA
Base-emitter cutoff voltage: 0.3 V
Collector-base cutoff current: 100 nA
Gain (hFE): 70 (at 50 mA collector current)
Pin configuration: SOT23, Package dimensions and outline as per datasheet
Buy the Infineon Series BCR523 NPN Transistor: BCR523E6327
Enhance your electronics projects with the reliable Infineon BCR523E6327 NPN silicon transistor. Designed for switching, inverters, and driver applications, this RoHS-compliant, Pb-free component delivers 50 V collector-emitter voltage, 500 mA collector current, and supports high-frequency operation. Its built-in bias resistors optimize circuit design, and the durable package ensures long-lasting performance. Perfect for industrial and power management solutions, this transistor offers excellent thermal stability and efficiency. Buy online today and ensure your projects are powered with high-quality electronic components.
Order your Infineon Series BCR523E6327 NPN silicon transistor today and give your projects the dependable power management they deserve.
Frequently Asked Questions
Where can I buy INFINEON BCR523E6327HTSA1?
You can click on the BUY or RFQ button to purchase BCR523E6327HTSA1 from an authorized INFINEON distributor.
How do I troubleshoot issues or seek technical support for part BCR523E6327HTSA1?