The BFP720ESD is a highly reliable low noise wideband NPN bipolar RF transistor built on Infineon’s silicon germanium heterojunction bipolar technology. Designed for mobile and communication applications, it supports voltages up to 4.2 V and currents up to 30 mA. With a transition frequency of approximately 43 GHz, it delivers high power gain up to 12 GHz. The device features integrated protection circuits, including 2kV ESD robustness, making it suitable for low power RF amplification, satellite, LTE, and WiMAX systems, housed in a user-friendly plastic package.
Experience the reliable performance of the BFP720ESD RF transistor, engineered for high-frequency applications up to 43 GHz. Featuring a robust 2kV ESD protection, high RF input power capacity, and low noise figure, this device is ideal for mobile, satellite, and emerging wireless systems. Its easy-to-handle SOT343 package simplifies integration into your design, offering high gain and excellent stability. Purchase online today to enhance your RF amplification projects with this durable, low noise RF transistor, ensuring optimal performance and reliability in demanding wireless communication environments.
You can click on the BUY or RFQ button to purchase BFP720ESDH6327XTSA1 from an authorized INFINEON distributor.
You can download the BFP720ESDH6327XTSA1 datasheet or visit the INFINEON website for support.
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