The BFR360F is a low noise silicon bipolar RF transistor designed for low current applications, supporting oscillators up to 3.5 GHz with a low noise figure of 1.0 dB at 1.8 GHz. It features a collector design compatible with a 5 V supply voltage, making it suitable for high-frequency amplification in RF communication systems. The device is Pb-free and halogen-free, housed in a small, flat package with visible leads, ensuring durability and ease of integration in compact electronic circuits. Suitable for low noise amplifier designs in modern RF modules.
Purchase the Infineon BFR360F today through our online store. This RF transistor is engineered for low noise applications supporting oscillators up to 3.5 GHz, featuring a low 1.0 dB noise figure at 1.8 GHz. Compact, Pb-free, halogen-free, and housed in a small flat package, it ensures reliable performance in RF modules and communication systems. Ideal for designing high-performance low noise amplifiers. Order now to enhance your RF project with this high-quality transistor designed for durability and precision.
Get Infineon BFR360F today—built for precision and long-lasting durability in RF low noise amplifier circuits.
Frequently Asked Questions
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