The IPP042N03L G is an OptiMOS™ N-channel Power MOSFET designed to enhance power density and energy efficiency. It offers improved electromagnetic interference (EMI) performance, contributing to increased battery life. The device is available in a half-bridge configuration and features a logic-level gate, very low on-resistance (RDS(on)), and an excellent gate charge to RDS(on) figure of merit (FOM). It is avalanche rated and halogen-free, making it a green device suitable for power management, motor control, LED lighting, computers, and portable electronics. Qualified according to JEDEC standards, it helps eliminate external snubber networks, saving space and reducing power losses.
Purchase the Infineon SeriesIP042N03L G Power MOSFET online today to upgrade your power management solutions. This high-efficiency, low RDS(on) device offers excellent gate charge performance and is ideal for applications requiring reliable, energy-efficient switching, such as motor drives, LED lighting, and portable electronics. Its halogen-free design is environmentally friendly, and the device's robust ratings ensure durability and consistent performance. Enjoy fast delivery and competitive pricing when you buy online—empowering your projects with top-tier electronic components.
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You can download the IPP042N03LGXKSA1 datasheet or visit the INFINEON website for support.
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