The BGS12P2L6 is a compact, high-power RF switch designed for broad applications from 0.05 to 6 GHz, particularly in GSM, WCDMA, and LTE mobile transmit paths. It features on-chip CMOS logic control, low insertion loss, high port-to-port isolation, and no external DC blocking capacitors if no DC is applied. Its ultra-low profile leadless package, combined with high EMI robustness and RoHS compliance, makes it ideal for space-constrained and demanding high-frequency, high-power RF systems.
INFINEON BGS12P2L6E6327XTSA1 RF Power Switch Specifications:
Frequency Range: 0.05 - 6 GHz
Power Handling Capability: Up to 37 dBm
Insertion Loss: 0.20 - 0.55 dB across frequency bands
Port Isolation: 32 - 45 dB depending on frequency
Return Loss: 15 - 27 dB
Control Voltage: Low at -0.3 V, High at 1.35 V to Vo
Supply Voltage: 1.65 to 3.4 V
Supply Current: 65-110 pA
RF Input Power Max: 38 dBm
Temperature Range: -40°C to 85°C
Package: TSLP-6-4, 0.7 x 1.1 mm, height 0.31 mm
ESD Capability: ±1kV on all RF ports, ±6 to ±8 kV with shunt inductors
Operating Temperature: -55°C to 150°C
Junction Temperature: Max 125°C
RoHS and WEEE compliant, Leadless, Halogen-Free
Buy the Infineon Series RF Switch: BGS12P2L6
Enhance your high-power RF systems with the Infineon BGS12P2L6, a compact and reliable switch suited for 0.05 to 6 GHz applications. Featuring low insertion loss, high port-to-port isolation, and on-chip CMOS control, this device is perfect for GSM, LTE, and WCDMA transmit paths. Its leadless, halogen-free package ensures space-saving design, high EMI robustness, and RoHS compliance. Ideal for mobile communications, it provides excellent performance, durability, and easy integration for demanding RF applications—order now to elevate your systems with trusted quality.
Order your Infineon Series RF Switch BGS12P2L6 today and give your high-frequency projects the reliable, compact performance they need.
Frequently Asked Questions
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