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INFINEON IPN60R1K5PFD7SATMA1 High Voltage Power MOSFET

The IPN60R1K5PFD7S is a 600V high-voltage power MOSFET utilizing Infineon's CoolIMOS™ superjunction technology. Designed for high efficiency in cost-sensitive consumer applications such as chargers, adapters, lighting, and motor drives, it offers extremely low losses, fast switching, and high avalanche ruggedness. Its optimized platform supports high power density and slim designs, with features like low R<sub>on</sub>, reduced switching losses, and integrated zener diode for enhanced ruggedness. Qualified per JEDEC standards, it is ideal for high-frequency, high-power density applications requiring reliable, efficient switching performance.

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Source:Newark
Part No:IPN60R1K5PFD7SATMA1
Stock:1748
Inv Date:05-29-2026
Price: Unit price: $1.08
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Source:DigiKey
Part No:IPN60R1K5PFD7SATMA1
Stock:1350
Inv Date:05-29-2026
Price: Unit price: $1.23
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Part No:IPN60R1K5PFD7SATMA1
Stock:1458
Inv Date:05-30-2026
Price: Unit price: $1.06
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Part No:IPN60R1K5PFD7SATMA1
Stock:0
Inv Date:05-29-2026
Price: Unit price: $0.33
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INFINEON IPN60R1K5PFD7SATMA1 High Voltage Power MOSFET Specifications:

  • Drain-source breakdown voltage: 600V
  • Maximum continuous drain current: 38A
  • Pulsed drain current: 6.0A
  • Avalanche energy, single pulse: 7mJ
  • Avalanche energy, repetitive: 0.04mJ
  • Gate threshold voltage: 3.5V to 4.5V
  • Drain-source on-state resistance: 2.893Ω at V<sub>GS</sub>=10V, Tj=150°C
  • Gate charge total: 46nC
  • Switching times: turn-on delay 64ns, rise time 8ns, turn-off delay 41.5ns, fall time varies
  • Operating junction temperature: -40°C to 150°C
  • Thermal resistance junction-solder point: 19.73°C/W
  • Power dissipation: 6W at Tc=25°C
  • Storage temperature: -40°C to 150°C
  • Gate resistance: 11Ω
  • Insulation withstand voltage: specified as V<sub>isolation</sub>
  • Body diode reverse recovery time: 40-59ns

Buy the Infineon IPN60R1K5PFD7S – Reliable High-Voltage MOSFET for Industrial Applications

Purchase the Infineon IPN60R1K5PFD7S high-voltage MOSFET online today to benefit from its exceptional low R<sub>on</sub>, fast switching speed, and rugged avalanche capabilities. Designed for high-efficiency, high-power density applications like chargers, adapters, lighting, and motor drives, this device ensures reliable operation in demanding environments. Its optimized platform supports slim, high-performance power modules, making it ideal for modern electronics requiring efficient, compact, and durable switching solutions. Buy now and upgrade your power systems with trusted quality and proven performance.

Order your Infineon series IPN60R1K5PFD7S high-voltage MOSFET today and enhance your high-efficiency power designs with proven reliability and rugged performance.

Frequently Asked Questions

Where can I buy INFINEON IPN60R1K5PFD7SATMA1?

You can click on the BUY or RFQ button to purchase IPN60R1K5PFD7SATMA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IPN60R1K5PFD7SATMA1?

You can download the IPN60R1K5PFD7SATMA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of IPN60R1K5PFD7SATMA1?

INFINEON

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