The SMBT2222A E6327 is a high-performance NPN silicon switching transistor with low collector-emitter saturation voltage, high DC current gain, and suitable for power management and industrial uses. Complemented by the SMBT2907AW PNP type, it features a SOT23 package, maximum collector-emitter voltage of 40 V, collector current up to 600 mA, and junction temperature of 150°C. Its reliable design supports various switching applications, offering excellent thermal resistance and rapid switching times. Market demand has extended lead times, and delivery schedules may fluctuate, making it essential for users to plan accordingly and consider the supply chain's stability.
Collector-emitter saturation voltage: 0.3 V at Ic=150mA, Ib=15mA
Base-emitter saturation voltage: 1.2 V
Total power dissipation: 360 mW
DC current gain: 35-100 depending on conditions
Switching times: Rise time ~25 ns, Storage time ~225 ns, Fall time ~60 ns
Buy the Infineon Series SMBT2222A NPN Silicon Switching Transistor: SMBT2222AE6327HTSA1
Order the Infineon SMBT2222A PNP silicon switching transistor online today and benefit from its low saturation voltage and high DC current gain. Designed for power management and industrial controls, it features a SOT23 package, maximum collector-emitter voltage of 40 V, and supports rapid switching with excellent thermal characteristics. Ensuring supply chain stability and prompt delivery, this transistor is an ideal choice for engineers and technicians seeking reliable performance in various electronic applications. Purchase now to enhance your project’s efficiency and dependability.
Buy Infineon SMBT2222A now and experience unmatched reliability and performance in switching applications.
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