The OptiMOS 60V power transistor by Infineon offers high efficiency and thermal performance for power management in various applications. It features a TSDSON-8 package with an enlarged source interconnection, optimized for high performance switch-mode power supplies and sync. rectification. The device boasts a low on-resistance, avalanche testing, and is qualified according to JEDEC standards. Its Pb-free and halogen-free design ensures environmental compliance, making it suitable for demanding industrial, automotive, and aerospace applications requiring reliable transistor switching and power dissipation.
INFINEON BSZ099N06LS5ATMA1 Power Transistor Specifications:
Vds: 60 V
Continuous drain current: 29 A at 25°C, 11 A at 100°C
Pulsed drain current: 160 A
Avalanche energy: 19 mJ
Gate-source voltage: ±20 V
Power dissipation: 24 W
Operating temperature range: -55°C to +150°C
Thermal resistance, junction to case: 3.5 K/W
Device on PCB, R_wa: 60 K/W
Gate threshold voltage: 1.1 to 2.3 V
Drain-source on resistance: 14.3 mΩ (typ.) at 4.5 V Vgs, 10 A
Gate charge total: 8.6 nC (typ.)
Reverse diode forward current: 32 A
Reverse recovery time: 36 ns
Package: TSDSON-8 (fused leads)
Buy the Infineon BSZ099N06LS5 – Reliable Power Transistor for Industrial Applications
Order the Infineon Power Transistor today for reliable power switching capabilities. Designed to provide low on-resistance, high pulse current, and excellent thermal management, this component ensures optimal performance in industrial, automotive, and aerospace applications. With environmentally friendly lead-free and halogen-free design, it meets strict industry standards. Its high avalanche energy and thermal stability make it ideal for high-demand power supply systems, ensuring long-term durability and efficiency. Secure your supply online now and improve your power electronics performance.
Get Infineon BSZ099N06LS5 today—built for power efficiency and long-lasting durability in demanding power management systems.
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