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INFINEON BSC010NE2LSATMA1 Power MOSFET

The INFINEON BSC010NE2LSATMA1 is a robust N-channel Power MOSFET optimized for high-performance Buck converter designs. Its low on-resistance minimizes power losses, while the 100% avalanche testing guarantees reliability under demanding conditions. Qualified according to JEDEC standards, this Pb-free and halogen-free MOSFET is suitable for a wide range of industrial applications requiring efficient power management. It offers superior thermal resistance and is designed for reliable operation in various electronic systems.

Authorized Distributors
Source:Newark
Part No:BSC010NE2LSATMA1
Stock:8213
Inv Date:05-29-2026
Price: Unit price: $0.797
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Source:DigiKey
Part No:BSC010NE2LSATMA1
Stock:0
Inv Date:05-29-2026
Price: Unit price: $0.64206
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Part No:BSC010NE2LSATMA1
Stock:0
Inv Date:05-30-2026
Price: Unit price: $2.09
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Part No:BSC010NE2LSATMA1
Stock:0
Inv Date:05-29-2026
Price: Unit price: $0.97
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Source:Arrow EU
Part No:BSC010NE2LSATMA1
Stock:5000
Inv Date:05-30-2026
Price: N/A
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Part No:BSC010NE2LSATMA1
Stock:30
Inv Date:05-30-2026
Price: N/A
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INFINEON BSC010NE2LSATMA1 Power MOSFET Specifications:

  • Vds: 25 V
  • Rds(on), max: 1.0 mW
  • Id: 100 A
  • Qoss: 33 nC
  • Qg(0V..10V): 64 nC
  • Continuous drain current: 100 A @ Tc=25°C
  • Pulsed drain current: 400 A
  • Avalanche current: 50 A
  • Avalanche energy: 190 mJ
  • Gate source voltage: ±20 V
  • Power dissipation: 96 W
  • Operating and storage temperature: -55 ... 150 °C
  • Thermal resistance, junction - case: 1.3 K/W
  • Thermal resistance, junction - ambient: 50 K/W
  • Drain-source breakdown voltage: 25 V
  • Gate threshold voltage: 1.2 V
  • Zero gate voltage drain current: 0.1 - 10 µA
  • Gate-source leakage current: -10 to 100 nA
  • Input capacitance: 4700 - 6300 pF
  • Output capacitance: 1700 - 2300 pF
  • Turn-on delay time: 6.7 ns
  • Rise time: 6.0 ns
  • Turn-off delay time: 34 ns
  • Fall time: 4.4 ns
  • Gate to source charge: 11 - 15 nC
  • Gate charge at threshold: 7.5 - 10 nC
  • Gate to drain charge: 6.8 - 10 nC
  • Switching charge: 10 - 15 nC
  • Gate charge total: 31 - 41 nC
  • Gate plateau voltage: 2.4 V
  • Diode continuous forward current: 96 A
  • Diode pulse current: 400 A
  • Diode forward voltage: 0.8 - 1 V
  • Reverse recovery charge: 20 nC

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Frequently Asked Questions

Where can I buy INFINEON BSC010NE2LSATMA1?

You can click on the BUY or RFQ button to purchase BSC010NE2LSATMA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part BSC010NE2LSATMA1?

You can download the BSC010NE2LSATMA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of BSC010NE2LSATMA1?

INFINEON

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