The FS100R12KT4G is an advanced IGBT module designed for inverter applications, featuring trench and fieldstop technology with emitter-controlled diodes. It handles high voltages up to 1200 V and continuous current of 100 A, suitable for power switching in industrial and automotive sectors. Its optimized thermal resistance and low switching losses ensure reliable performance under demanding conditions. The module supports high-speed switching, making it ideal for efficient inverter systems, with robust isolation and a compact, durable design for long-term operation.
INFINEON FS100R12KT4GBOSA1 IGBT Power Module Specifications:
Collector-Emitter Voltage: 1200 V
Continuous DC Collector Current: 100 A at 95°C
Repetitive Peak Collector Current: 200 A at 1 ms
Total Power Dissipation: 515 W at 25°C
Gate-Emitter Peak Voltage: +120 V
Collector-Emitter Saturation Voltage: 2.20 V at 100 A, Vee = 15 V
Gate Threshold Voltage: 4.00 V minimum
Gate Charge: 0.80 μC at Vee = -15 V to +15 V
Internal Gate Resistor: 75 Ω at 25°C
Input Capacitance: 6.30 nF at 1 MHz, 25°C
Reverse Transfer Capacitance: 0.27 nF at 1 MHz
Collector-Emitter Leak Current: less than 1.0 mA at 1200 V
Gate-Emitter Leakage Current: less than 100 nA at Vee = 20 V
Switching Delay Times (on/off): approx. 0.13–0.48 μs
Buy the Buy Infineon IGBT Module FS100R12KT4G Online
Order the Infineon FS100R12KT4G IGBT module online today for reliable, high-performance inverter applications. This robust module features trench technology, emitter-controlled diodes, and high-voltage handling up to 1200 V. With a continuous current rating of 100 A and excellent thermal management, it ensures efficient operation in industrial and automotive power systems, offering low switching and conduction losses. Its compact, durable design supports long-term operation under demanding conditions. Purchase now for quick delivery and optimized power switching performance.
Get Infineon FS100R12KT4G today—built for high-voltage power switching and long-lasting durability.
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