The CoolSiC™ Generation 6 is an advanced 650V Silicon Carbide Schottky Diode from Infineon, designed for high efficiency power conversion. It features a low forward voltage of 1.25 V, excellent dv/dt ruggedness of 150 V/ns, and a high surge-repetitive forward current of 8 A. Optimized for applications like power factor correction, solar inverters, and uninterruptible power supplies, this diode offers system efficiency improvements, cost savings through reduced cooling, and supports high-frequency operation for increased power densities. It is qualified for industrial use per JEDEC standards.
Forward Voltage: 1.25 V (at 8 A, 25°C), 1.50 V (at 8 A, 150°C)
Surge-Repetitive Forward Current: 8 A
Peak Repetitive Forward Voltage: 530 V
Peak Reverse Voltage: 650 V
dv/dt Ruggedness: 150 V/ns
Power Dissipation: 63 W
Operating Temperature Range: -55°C to +175°C
Thermal Resistance, Junction-to-Case: 14 K/W
Total Capacitance: 7 pF at 600 V, 1 MHz
Maximum Storage and Operating Temp: 175°C
Qualified per JEDEC tests for industrial applications
Package: PG-TO-220-2
Soldering: Wave soldering at 260°C for 10 sec
Buy the Infineon Series CoolSiC 650V SiC Schottky Diode: IDH08G65C6XKSA1
Buy your Infineon Series CoolSiC 650V Silicon Carbide Schottky Diode now to ensure your power conversion projects achieve maximum efficiency, reliability, and cost savings. Designed for demanding industrial power applications, this diode offers low forward voltage, high dv/dt tolerance, and high surge current capabilities, qualifying under JEDEC standards. Its compact package and high-temperature resilience make it ideal for solar inverters, power supplies, and UPS systems. Purchase today online and upgrade your power electronics with proven semiconductor technology.
Order your Infineon Series CoolSiC 650V SiC Schottky Diode today and enhance your power systems with industry-leading efficiency and ruggedness.
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