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INFINEON IPG20N06S4L11ATMA1 OptiMOS Transistor
OptiMOS™ -T2 power transistor, a dual N-channel logic level enhancement mode device. It is automotive AEC Q101 qualified, capable of operating at temperatures up to 175°C, and has been 100% avalanche tested. Suitable for demanding applications requiring high temperature and reliability.
INFINEON IPG20N06S4L11ATMA1 OptiMOS Transistor Specifications:
- Continuous drain current: 20 A at 25°C, 20 A at 100°C, Pulsed drain current: 80 A
- Drain-source breakdown voltage: 60 V
- Gate threshold voltage: 1.2 V (min), 1.7 V (typ), 2.2 V (max)
- Power dissipation: 65 W at 25°C
- Thermal resistance junction-case: 2.3 K/W
- Operating and storage temperature: -55°C to 175°C
- Gate-source voltage: ±16 V
- Drain-source on-state resistance: 12.5 mΩ (Vas=4.5 V, Ip=10 A), 9.5 mΩ (Ves=10 V, Ip=17 A)
- Input capacitance: 3090 pF, Output capacitance: 720 pF, Reverse transfer capacitance: 34 pF
- Avalanche energy, single pulse: 165 mJ, Avalanche current: 15 A
- Thermal characteristics are suitable for PCB mounting with minimal cooling area
- Available in PG-TDSON-8-4 package, RoHS compliant, green product
Buy the Buy Cinfineon OptiMOS Transistor Part Number IPG20N06S4L11 Online
Purchase the Cinfineon OptiMOS Transistor IPG20N06S4L11 online today. Designed for high power switching and reliable operation at elevated temperatures, this dual N-channel enhancement mode device is automotive qualified, avalanche tested, and RoHS compliant. Its robust performance makes it ideal for demanding industrial or automotive applications, ensuring durability and efficiency. Secure your stock now and benefit from fast delivery, trusted quality, and the best prices for power transistors in the market.
Get Cinfineon IPG20N06S4L11 today—built for high-temperature performance and long-lasting reliability.
Frequently Asked Questions
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You can download the IPG20N06S4L11ATMA1 datasheet or visit the INFINEON website for support.
Who is the manufacturer of IPG20N06S4L11ATMA1?
INFINEON