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INFINEON IDW30G120C5BFKSA1 Silicon Carbide Diode
The IDW30G120C5B is a high-performance Silicon Carbide Schottky Diode designed for industrial power control applications. It features no reverse recovery current, temperature-independent switching, low forward voltage at high temperatures, excellent thermal performance, and extended surge current capability. Suitable for solar inverters, uninterruptable power supplies, motor drives, and power factor correction, this diode offers system efficiency, reduced EMI, and high reliability. Qualified according to JEDEC standards, it ensures robustness during surge events and system efficiency improvements, making it ideal for high-frequency, high-density power solutions.
INFINEON IDW30G120C5BFKSA1 Silicon Carbide Diode Specifications:
- Repetitive peak reverse voltage: 1200 V
- Continuous forward current: 15/30 A at Tc=150°C, 20/40 A at Te=135°C, 44/87 A at To=25°C
- Surge non-repetitive forward current: 120/240 A at To=25°C, 115/230 A at Tc=150°C
- Non-repetitive peak forward current: 1230/2460 A at Tj=25°C
- Diode dv/dt ruggedness: 80 /ns
- Power dissipation: 166/332 W at To=25°C
- Operating temperature range: -55°C to 175°C
- Soldering temperature: 260°C for 10s
- Thermal resistance junction-case: 0.77/0.905 K/W
- DC blocking voltage: 1200 V
- Diode forward voltage at 15/30 A: 1.4 - 2.30 V at T=25°C/150°C
- Reversal current: 124/248 A at 1200 V, Tj=25°C
- Total capacitance: 70/140 pF at 400 V, 1 MHz
- Capacitive charge: 77/154 nc at Va=800 V
- Maximum reverse voltage: 1200 V
- Reverse capacitance: 55/111 pF at 800 V
- Power dissipation: 166/332 W, max temperature: 175°C
- Package dimensions: a 4.83-5.21 mm, D 20.80-21.40 mm, E 15.70-16.13 mm
Buy the Infineon Series thinQ!™ 1200 V Silicon Carbide Diode: IDW30G120C5B
Discover the high-performance Silicon Carbide Diode designed for industrial power control, solar inverters, and UPS systems. The IDW30G120C5B offers exceptional efficiency, thermal stability, and surge current capacity. Its robust construction ensures reliability during surge events, reduces EMI, and supports high-frequency applications. With a voltage rating of 1200 V and low forward voltage, it improves overall system efficiency while enabling compact, cost-effective designs. Buy this technologically advanced diode online today for dependable, high-density power solutions.
Order your Infineon Series thinQ!™ 1200 V Silicon Carbide Diode IDW30G120C5B today and enhance your power systems with reliable high-voltage semiconductors.
Frequently Asked Questions
Where can I buy INFINEON IDW30G120C5BFKSA1?
You can click on the BUY or RFQ button to purchase IDW30G120C5BFKSA1 from an authorized INFINEON distributor.
How do I troubleshoot issues or seek technical support for part IDW30G120C5BFKSA1?
You can download the IDW30G120C5BFKSA1 datasheet or visit the INFINEON website for support.
Who is the manufacturer of IDW30G120C5BFKSA1?
INFINEON