The CoolMOS CFD7 is a high-voltage power MOSFET featuring superjunction technology, designed for soft switching applications like resonant topologies and LLC. It offers low gate charge, best-in-class reverse recovery charge, and ruggedness against high dv/dt and di/dt. Ideal for high efficiency, high power density applications such as server, telecom, and EV charging, it provides excellent reliability, easy implementation, and supports high power density solutions for demanding industrial environments.
INFINEON IPA60R125CFD7XKSA1 Power MOSFET Specifications:
Maximum drain-source voltage Vos @ Ti,max 650 V
Reverse recovery charge Qr 0.94 pC
Gate charge total Qg 36 nc
Continuous drain current Io 7 A
Pulsed drain current Ip,pulse 66 A
Avalanche energy single pulse Ens 78 mJ
Thermal resistance junction-case Rinuc 3.92 °C/W
Thermal resistance junction-ambient Rina 80 °C/W
Maximum operating junction temperature Tj -55 to 150 °C
Gate-source voltage Ves ±20 V
Drain-source on-resistance Ros(on) 0.237 Ω at Vos=10V, Tj=150°C
Power dissipation Prot 32 W at Tc=25°C
Buy the Infineon Series CFD7 Power Transistor: IPA60R125CFD7
Purchase the Infineon Series CFD7 IPA60R125CFD7 today to enhance your high-voltage applications with reliable, efficient, and rugged MOSFET technology. Designed for soft switching topologies such as LLC and phase-shift full-bridge, this device delivers low gate charge, excellent ruggedness, and high thermal stability. Its superior reverse recovery charge and fast switching capabilities support high power density solutions, making it ideal for server, telecom, and EV charging systems. Buy online now for fast delivery and expert support to ensure seamless integration into your design.
Order your Infineon Series CFD7 IPA60R125CFD7 today and give your projects the dependable quality and high efficiency they deserve, optimized for resonant switching and high power density solutions.
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