The IRFS3306PbF is a high-efficiency N-channel HEXFET power MOSFET designed for robust switching applications in power supplies and motor control. It features a drain-to-source breakdown voltage of 60V, low Rds(on) of 4.2 mΩ at 10V Vgs, and a maximum continuous drain current of 120A. The device is RoHS compliant, halogen-free, and offers excellent avalanche and dynamic dV/dt capabilities for high-speed power switching. It is available in TO-262, D2Pak, and TO-220AB packages, ensuring flexible integration options for various designs.
INFINEON IRFS3306TRLPBF Power MOSFET Specifications:
Drain-to-Source Breakdown Voltage: 60 V
Static Drain-to-Source On-Resistance: 4.2 mΩ at Vgs = 10V
Continuous Drain Current: 120 A at Tj = 25°C
Pulsed Drain Current: 620 A
Maximum Power Dissipation: 230 W
Avalanche Energy: 184 mJ
Gate Threshold Voltage: 2.0 V to 4.0 V
Gate-to-Source Forward Leakage: 100 V
Operating Junction Temperature Range: -55°C to +175°C
Package Types: TO-262, D2Pak, TO-220AB
RoHS Compliant, Halogen-Free
Buy the International IRFS3306PbF – Reliable Power MOSFET for Industrial Applications
Order the IRFS3306PbF power MOSFET online today to enhance your power switching designs with its low Rds(on), high current capacity, and robust avalanche performance. This RoHS-compliant device ensures efficient operation across a wide temperature range and offers flexible package options including TO-262, D2Pak, and TO-220AB for easy integration into your industrial, motor control, or power conversion applications. Purchase now to benefit from fast shipping, reliable quality, and technical support from authorized distributors.
Buy International IRFS3306PbF now and experience unmatched reliability and performance in power switching circuits.
Frequently Asked Questions
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