The high-speed switching series third-generation IGBT offers ultra-low loss switching, high efficiency in resonant topologies, and a short circuit withstand time of 10 microseconds at Tj=175°C. Packaged with a soft, fast recovery anti-parallel diode and Kelvin emitter pin for low switching losses, it is suitable for industrial UPS, chargers, energy storage, and solar inverters. The device is RoHS compliant, Pb-free, and qualified according to JEDEC standards for industrial applications, ensuring reliable performance in demanding environments.
Gate-emitter voltage: +20 V (max), transient +30 V
Power dissipation at Tc=25°C: 938 W
Thermal resistance junction-case: 0.16 K/W
Collector-emitter voltage: 1200 V
Pulsed collector current: 300 A
Diode forward voltage: 1.90-2.35 V
Switching energy: approx. 6.3 mJ (typ at 25°C)
RoHS compliant, Pb-free, package: PG-TO247-4-2
Buy the Infineon IKY75N120CH3 – Reliable High-Speed IGBT for Industrial Applications
Purchase the reliable high-speed IGBT module online today to enhance your industrial power systems. Featuring ultra-low switching losses, fast recovery diode, and qualified for demanding applications, this device ensures efficiency and durability. Perfect for UPS systems, solar inverters, chargers, and energy storage. Its RoHS compliance and Pb-free design make it an environmentally friendly choice. Order now to streamline your project development with a trusted power component that delivers exceptional performance under high thermal and electrical stresses.
Order your Infineon series IKY75N120CH3 IGBT today and provide your power electronics projects with dependable high-speed switching performance.
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