INFINEON IMBG120R140M1HXTMA1 1200V SiC Trench MOSFET
The CoolSic 1200V SiC Trench MOSFET offers exceptional efficiency, high power density, and superior thermal performance thanks to Infineon's .XT interconnection technology. It features very low switching losses, robust body diode, and short circuit withstand time of 3 microseconds, making it ideal for industrial drives, solar inverters, and energy systems. Its fully controllable dv/dt and benchmark gate threshold voltage ensure reliable operation. Designed for demanding applications, this MOSFET combines durability with optimized switching performance, reducing cooling needs and system complexity.
INFINEON IMBG120R140M1HXTMA1 1200V SiC Trench MOSFET Specifications:
Drain-source voltage: 1200 V
Drain current at 25°C: 18 A
Pulsed drain current: 47 A
Gate-source voltage: recommended 15-18 V, maximum ±23 V
Body diode forward voltage: approximately 4.1-5.2 V at 6A
Short circuit withstand time: 3 microseconds
Power dissipation at 25°C: 107 W
Thermal resistance junction-case: 1.4 K/W
Thermal resistance junction-ambient: up to 62 K/W
Operating temperature range: -55°C to 175°C
Storage temperature: -55°C to 150°C
Soldering temperature: 260°C
Reflow soldering: MSL1 (JEDEC J-STD-020)
Package type: PG-T0263-7
Buy the Buy Infineon CoolSic 1200V SiC Trench MOSFET Part Number IMBG120R140M1H Online
Purchase the Infineon IMBG120R140M1H online and enhance your power electronics with this 1200V SiC trench MOSFET. It offers low switching losses, exceptional thermal performance, and robust operation for energy, industrial, and solar systems. Designed for demanding applications, this MOSFET delivers high power density, reduced cooling requirements, and simplified system integration. Secure your supply today and benefit from fast delivery, trusted quality, and technical support to ensure optimal system performance and longevity.
Buy Infineon IMBG120R140M1H now and experience unmatched reliability and high efficiency in advanced power switching applications with this robust SiC MOSFET.
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