The BFR360L3 is a low noise silicon bipolar RF transistor designed for high-performance low noise amplifiers, oscillators up to 3.5 GHz, and applications requiring low voltage and current operation. With excellent noise figure of 1.0 dB at 1.8 GHz, it’s ideal for RF front-end modules, offering a Pb-free and halogen-free thin package that complies with RoHS standards. This transistor ensures reliable operation with a maximum collector-emitter voltage of 6 V and a collector-base voltage of 15 V, making it suitable for various industrial RF applications.
Thermal resistance: 220 K/W (junction to soldering point)
Transition frequency: 11 to 14 GHz
Noise figure: 1.0 dB at 1.8 GHz
Power gain: 16 dB at 1.8 GHz
Collector-emitter breakdown voltage: 9 V min
DC current gain: 90 to 160
Package: TSLP-3-1, Pb-free, halogen-free
Maximum operating temperature: 150°C
Storage temperature: -55°C to 150°C
Buy the Infineon BFR360L3 – Reliable RF Transistor for Industrial Applications
Order the Infineon BFR360L3 RF transistor online today to ensure high-performance low noise amplification, reliable operation in oscillators, and RF frontend modules. Designed for applications up to 3.5 GHz, it offers a low noise figure of 1.0 dB at 1.8 GHz, making it ideal for sensitive RF circuits. This Pb-free and halogen-free component meets RoHS standards and features a compact, reliable package suitable for manufacturing and repair needs. Purchase now to enhance your RF design with proven quality and durability.
Get Infineon BFR360L3 today—built for precision, low noise performance, and long-lasting durability in RF and communication systems.
Frequently Asked Questions
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