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INFINEON IMW120R350M1HXKSA1 Silicon Carbide Power MOSFET

The CoolSic™ 1200V SiC Trench MOSFET offers high efficiency, enabling higher frequency operation and increased power density. It features low switching losses, a threshold-free on-state characteristic, and a robust body diode suitable for hard commutation. Designed for industrial power supplies, solar inverters, and infrastructure chargers, it ensures optimal performance with temperature-independent switching losses and qualified for industrial applications. Its package is optimized for reliability in high-voltage, high-current environments, supporting advanced energy and industrial automation systems.

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Source:Newark
Part No:IMW120R350M1HXKSA1
Stock:68
Inv Date:05-29-2026
Price: Unit price: $6.87
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Part No:IMW120R350M1HXKSA1
Stock:801
Inv Date:05-29-2026
Price: Unit price: $7.44
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Part No:IMW120R350M1HXKSA1
Stock:657
Inv Date:05-30-2026
Price: Unit price: $6.36
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Part No:IMW120R350M1HXKSA1
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Inv Date:05-29-2026
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INFINEON IMW120R350M1HXKSA1 Silicon Carbide Power MOSFET Specifications:

  • Drain-source Voltage: 1200 V
  • Drain Current: 4.7 A at 25°C, 47 A pulsed
  • Gate-Source Voltage: 15-18 V recommended turn-on, 0 V turn-off
  • Power Dissipation: 60 W at 25°C, 30 W at 100°C
  • Thermal Resistance: Junction to case 2.5 K/W, junction to ambient up to 62 K/W
  • Junction Temperature Range: -55°C to 175°C
  • Package: PG-T0247-3, dimensions: L 79.80 mm, D 20.80 mm, detailed pin spacing
  • Body Diode Forward Voltage: typical 4.1V at 2A, 25°C
  • Switching Energy: E-on 41-51 µJ, E-off 4-5 µJ depending on temperature
  • Gate charge: approx. 5.3 nC at Vgs = 15 V, 25°C
  • Capacitances: Ciss 182 pF, Coss 10 pF, typical at 1 MHz
  • Voltage Transients: Max 23 V during switching
  • Maximum Pulsed and DC Currents: 47A at 25°C, 13A pulsed for body diode
  • Storage Temperature: -55°C to 150°C, soldering at 260°C for 10s, mounting torque max 3 M3 screws

Buy the Buy Infineon CoolSic 1200V SiC Trench MOSFET Part Number IMW120R350M1HXKSA1 Online

Secure your high-voltage power solutions with Infineon SiC Trench MOSFET IMW120R350M1HX. Designed for industrial and renewable energy applications, this device provides low switching losses, a robust body diode, and reliable thermal performance. It enhances system efficiency, allows higher frequency operation, and reduces system complexity and costs. Ideal for solar inverters, industrial power supplies, and infrastructure chargers, it ensures long-lasting durability and optimal performance across a wide temperature range. Purchase online today for dependable high-voltage switching technology.

Get Infineon IMW120R350M1HX today—built for high-voltage efficiency and industrial durability.

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You can download the IMW120R350M1HXKSA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of IMW120R350M1HXKSA1?

INFINEON

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