The CoolSic™ 1200V SiC Trench MOSFET is a high-efficiency power switch designed for industrial and renewable energy applications. Featuring ultra-low switching losses, a threshold-free on-state characteristic, and a robust body diode, it enhances energy conversion efficiency, enabling higher switching frequencies and increased power density. Its wide gate-source voltage range and temperature-independent switching losses make it suitable for demanding environments like solar inverters, industrial power supplies, and chargers. Qualified per JEDEC standards, this MOSFET ensures reliable performance in various industrial systems.
INFINEON IMW120R060M1HXKSA1 Power MOSFET Specifications:
Drain-source voltage: 1200 V
Drain current: 36 A (at 25°C), 26 A (at 100°C)
Pulsed drain current: 76 A
Gate-source voltage: -7V to 23V
Power dissipation: 150 W (at 25°C), 75 W (at 100°C)
Junction temperature range: -55°C to 175°C
Thermal resistance, junction-case: 0.8 K/W
Thermal resistance, junction-ambient: 62 K/W
Drain-source on-state resistance: 60-113 mΩ (at 25°C to 175°C)
Gate threshold voltage: 3.5V to 5.7V
Capacitances: Coss approximately 1060 pF (at 800V)
Switching energies: Eon approximately 181-241 nJ depending on temperature
Package: PG-TO0247-3
Buy the Buy Infineon CoolSic 1200V SiC Trench MOSFET Part Number IMW120R060M1H Online
Order the Infineon IMW120R060M1H now to benefit from advanced silicon carbide technology, leading to improved energy efficiency, higher switching speeds, and system simplification in industrial power supplies, solar inverters, and chargers. This robust 1200V MOSFET delivers low switching losses, high current capacity, and reliable operation under demanding conditions, ensuring optimal performance and long-term durability for your power electronics projects.
Buy Infineon IMW120R060M1H now and experience unmatched reliability and high efficiency in switching power applications.
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