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INFINEON IMW65R027M1HXKSA1 Silicon Carbide MOSFET
The 650 V CoolSiC™ MOSFET is built on Infineon's advanced silicon carbide technology, offering exceptional performance, reliability, and high-temperature operation for demanding industrial applications. Suitable for high-efficiency power systems, it features optimized switching behavior, robust body diode for fast recovery, and superior thermal conductivity. Its design enables simplified integration into high-power topologies like SMPS, UPS, solar inverters, and EV charging infrastructure, ensuring system robustness, efficiency, and reduced size. Fully qualified for industrial use, it delivers high avalanche capability and system reliability.
INFINEON IMW65R027M1HXKSA1 Silicon Carbide MOSFET Specifications:
- Voltage Rating: 650 V
- Continuous Drain Current: 3 A
- Pulsed Drain Current: 185 A
- Avalanche Energy (single pulse): 326 mJ
- Avalanche Energy (repetitive): 1.63 mJ
- Gate Threshold Voltage: 3.5 V to 5.7 V
- Gate Resistance: 3.0 Ω
- Drain-Source On-Resistance: 0.035 Ω
- Input Capacitance: 2131 pF
- Output Capacitance (Coss): 244 pF
- Reverse Capacitance (Crss): 22 pF
- Maximum Operating Junction Temperature: 150°C
- Storage Temperature Range: -55°C to 150°C
- Thermal Resistance, Junction to Case: 0.66 °C/W
- Thermal Resistance, Junction to Ambient: 62 °C/W
- Maximum Power Dissipation: 189 W
- Soldering Temperature (wave soldering): 260°C for 10 seconds
- Mounting Torque: up to 60 N·cm
- Insulation Withstand Voltage: Viso unspecified
- Package: PG-TO 247-3 (Imperial dimensions included), Dimensions in mm and inches
Buy the Infineon IMW65R027M1H – Reliable SiC Power Device for Industrial Applications
Purchase the Infineon IMW65R027M1H silicon carbide MOSFET online today and benefit from high system efficiency, exceptional reliability, and ease of integration into demanding industrial power applications. With a voltage rating of 650 V, it offers dynamic performance for high-temperature environments, making it perfect for solar inverters, UPS systems, EV charging infrastructure, and energy storage solutions. Its robust design, low on-resistance, and high avalanche capability ensure system robustness, enabling optimized and cost-effective power management for high-power electronics.
Order your Infineon IMW65R027M1H silicon carbide MOSFET today and enhance your industrial power systems with high efficiency and robustness.
Frequently Asked Questions
Where can I buy INFINEON IMW65R027M1HXKSA1?
You can click on the BUY or RFQ button to purchase IMW65R027M1HXKSA1 from an authorized INFINEON distributor.
How do I troubleshoot issues or seek technical support for part IMW65R027M1HXKSA1?
You can download the IMW65R027M1HXKSA1 datasheet or visit the INFINEON website for support.
Who is the manufacturer of IMW65R027M1HXKSA1?
INFINEON