The AIGB30N65F5 is a high-speed, fifth-generation IGBT utilizing TRENCHSTOP™ 5 technology designed for efficient switching in power electronics. It features 650V breakdown voltage, low gate charge, and is qualified under AEC-Q101, making it suitable for demanding applications such as off-board chargers, on-board chargers, DC/DC converters, and power-factor correction. The device offers high reliability, low switching losses, and a maximum junction temperature of 175°C, packaged in a RoHS-compliant, green PG-TO263-3 format. Ideal for high-performance, long-lasting power switching solutions.
INFINEON AIGB30N65F5ATMA1 High Speed Power IGBT Specifications:
Voltage Rating: 650 V
Collector Current: 30 A
Pulsed Collector Current: 90 A
Gate-Emitter Voltage: +20 V
Maximum Junction Temperature: 175°C
Storage Temperature: -55°C to +150°C
Soldering Temperature (Reflow): 260°C
Thermal Resistance (junction-case): 0.80 K/W
Thermal Resistance (junction-ambient): 85 K/W
Capacitance: Input 1800 pF, Output 50 pF
Switching Times: Turn-on delay 25 ns, Fall time 25 ns at 25°C
Energy Losses: Use for high-frequency switching, approx. 0.12 to 0.52 mJ depending on conditions
Package: PG-TO263-3, RoHS Compliant, Green Packaging
Buy the Infineon Series Fifth Generation High Speed IGBT: AIGB30N65F5
Purchase the Infineon AIGB30N65F5 high-speed IGBT online today and enhance your power electronic systems. This fifth-generation device offers superior efficiency, low gate charge, and high reliability, making it ideal for chargers, DC/DC converters, and power factor correction applications. Its robust 650V breakdown voltage and maximum junction temperature of 175°C ensure durability under demanding conditions. Available in RoHS-compliant green packaging, it provides excellent switching performance with low losses, ensuring your system’s long-term operational excellence.
Get Infineon AIGB30N65F5 today—built for high-speed switching, efficiency, and long-lasting durability in power electronics.
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