The 650 V CoolSiC™ MOSFET from Infineon offers high efficiency, reliability, and ease of integration in high-temperature, harsh operation environments. Built on over 20 years of silicon carbide technology, it features optimized switching behavior, a robust body diode, and superior gate oxide reliability. Ideal for power conversion, solar inverters, EV charging, and energy storage, it provides high avalanche capability, low conduction resistance, and compatibility with standard drivers, ensuring system robustness and improved performance.
Drain-source on-resistance: typ. 0.139 Ω at 18 V and 8.9 A
Input capacitance: 496 pF
Output capacitance: 58 pF to 75 pF
Total gate charge: 15 nC
Maximum junction temperature: 150°C
Storage temperature range: -55°C to 150°C
Thermal resistance junction to case: 1.6 °C/W
Thermal resistance junction to ambient: 62 °C/W
Operating temperature: -55°C to 150°C
Peak reverse recovery current: 6.8 A
Buy the Buy Infineon CoolSiC MOSFET Part Number IMZA65R107M1HXKSA1 Online
Order the Infineon silicon carbide MOSFET online for superior power management in demanding environments. Designed for high temperature, high voltage, and high current applications, this device provides optimized switching, low conduction losses, and high avalanche capability. Perfect for solar inverters, EV chargers, UPS, and energy storage systems, ensuring enhanced efficiency, system robustness, and reduced size. Buying online guarantees quick delivery and access to certified, validated semiconductor components for your industrial and power electronics projects.
Get Infineon CoolSiC IMZA65R107M1HXKSA1 today—built for high efficiency, robustness, and long-lasting reliability in power applications.
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