The IRF5802PbF is a high-performance HEXFET Power MOSFET in a TSOP-6 package, designed for efficient switching in high frequency DC-DC converters, power supplies, and industrial applications. Featuring low gate-to-drain charge to reduce switching losses, it includes fully characterized capacitance, avalanche voltage, and current ratings for reliable operation. With a drain-to-source breakdown voltage of 150V and low on-resistance, this lead-free, halogen-free device ensures optimal thermal performance and safety in compact electronics and power management systems. Suitable for high-current and fast-switching applications, it supports robust circuit design and durability.
INFINEON IRF5802TRPBF Power MOSFET Specifications:
Drain-to-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 0.9A
Continuous Drain Current at 70°C: 0.7A
Pulsed Drain Current: 7.0A
Power Dissipation: 2.0W
Gate-to-Source Voltage: +30V
Maximum Junction-to-Ambient Resistance: 62.5°C/W
Gate Threshold Voltage: 3.0V to 5.5V
Static On-Resistance (Rds on): 1.2Ω
Total Gate Charge: 4.5 to 68 nC
Output Capacitance (Coss): 26 to 110 pF
Avalanche Energy: 9.5 mJ
Operating Temperature Range: -55°C to +150°C
Storage Temperature Range: -55°C to +150°C
Soldering Temperature (10 sec): 300°C
Lead-Free TSOP-6 Package, Halogen-Free
Buy the Buy IRFIR5802PbF Power MOSFET Part Number IRF5802PbF Online
Order the IRF5802PbF Power MOSFET online today for high voltage switching and exceptional efficiency in power electronics. This lead-free TSOP-6 packaged device offers low gate charge, low on-resistance, and fully characterized avalanche ratings, making it ideal for high frequency DC-DC converters, power supplies, and industrial applications. Its robust thermal stability and compact design ensure long-term durability and performance in demanding environments. Purchase now to enhance your circuit's reliability, reduce switching losses, and streamline your power management system with this industry-grade MOSFET.
Buy IRF5802PbF now and experience unmatched reliability and performance in high-frequency power switching applications.
Frequently Asked Questions
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