INFINEON IPA65R190E6XKSA1 High Voltage Power MOSFET
The IPA65R190E6XKSA1 is a high-voltage power MOSFET featuring the revolutionary CoolMOS E6 technology, designed based on superjunction (SJ) principles. It offers extremely low switching and conduction losses, making it ideal for PFC, PWM, and resonant switching applications in power supplies, lighting, and telecom sectors. Its rugged high-voltage capability of 650V, high avalanche energy, and robust thermal performance ensure efficiency, reliability, and ease of use in demanding industrial environments. Suitable for compact, efficient, and cooler switching solutions with high efficiency.
Soldering temperature: 260°C, wave-soldering permitted at from case for 10 s
Power dissipation: up to 160 W (FullPAK), 34 W (TO-220)
Peak diode reverse dv/dt: 15 V/ns
Mounting torque: 60 Ncm with M3 screws, 50 Ncm with M2.5 screws
Designed for high efficiency, low losses, and rugged switching in power supplies, lighting, UPS, telecom, and industrial systems
Buy the Buy Infineon CoolMOS E6 Power MOSFET Part Number IPA65R190E6XKSA1 Online
Discover the advanced IPA65R190E6XKSA1 high voltage power MOSFET, engineered for efficient switching in industrial, lighting, and telecom applications. Featuring the innovative CoolMOS E6 technology, it provides extremely low losses, high avalanche energy, and rugged operation up to 650V. Its easy-to-drive design ensures seamless integration into your power circuit. Whether for PFC, PWM, or resonant switching applications, this MOSFET guarantees reliability, thermal stability, and superior performance. Purchase online today to enhance your power management solutions with this industry-leading component.
Get Infineon IPA65R190E6XKSA1 today—built for high-voltage switching, low-loss operation, and reliable industrial performance.
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