INFINEON IPW60R099C6FKSA1 High-Voltage Power MOSFET
The 600V CoolMOS C6 Power Transistor is a high-performance, easy-to-drive MOSFET featuring extremely low switching and conduction losses. Designed with superjunction technology, it offers high switching ruggedness and efficiency for applications like PFC stages, PWM switching, and resonant power supplies in electronics, lighting, and industrial systems. Compliant with JEDEC standards, it ensures reliable performance in demanding environments. This device's compact TO-247 package supports multiple mounting options and thermal management, making it ideal for high-frequency, high-current switching in industrial power management systems.
INFINEON IPW60R099C6FKSA1 High-Voltage Power MOSFET Specifications:
Maximum drain-source voltage: 600 V
Drain-source on-state resistance: max 0.099 Ω
Continuous drain current: 37.9 A at 25°C, 24 A at 100°C
Pulsed drain current: 112 A
Avalanche energy, single pulse: 796 mJ
Avalanche energy, repetitive: 1.2 J
Power dissipation: 278 W at 25°C (TO-220, TO-247, TO-263 package)
Operating and storage temperature: -55°C to +150°C
Thermal resistance junction to case: approximately 0.45°C/W
Gate threshold voltage: 3 to 3.5 V
Gate source leakage current: max 100 nA at 20 V
Gate charge total: approximately 119 nc
Buy the Infineon IPx60RO99C6 U+2013 Reliable MOSFET for Industrial Applications
Order the Infineon IPx60RO99C6 Power MOSFET today to enhance your high-voltage switching applications. Designed with innovative superjunction technology, this device offers extremely low losses, high ruggedness, and ease of use. Its robust construction and excellent thermal performance make it suitable for PFC, PWM, and resonant power supplies in industrial, lighting, and consumer electronics. Ensure reliable operation and improved efficiency in your systems by purchasing this premium MOSFET online now, with fast delivery and technical support.
Get Infineon IPx60RO99C6 today—built for precision and long-lasting durability in high-voltage switching systems.
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