The 600V CoolMOS CFD7 Power Transistor is a high-efficiency, superjunction MOSFET designed for soft switching applications like phase-shift full-bridge and LLC. It features an ultra-fast body diode, low gate charge, minimal reverse recovery charge, and rugged dv/dt capabilities, making it ideal for resonant topologies, server, telecom, and EV charging systems. Its optimized platform ensures superior reliability, high power density, and ease of implementation for demanding industrial and power conversion applications, meeting stringent JEDEC standards for industrial qualification.
INFINEON IPD60R170CFD7ATMA1 Power Transistor Specifications:
Vos @ Ti,max: 650 V
Ros(on)max: 170 mΩ
Qasyp: 28 nc
Io,puise: 51 A
Eoss @ 400V: 3.2 pd
Body diode dv/dt: 1300 V/μs
Avalanche energy, single pulse: 60 mJ
Avalanche energy, repetitive: 0.30 mJ
Gate threshold voltage: 3.5 V to 4.5 V
Drain-source Rds(on): 0.325 Ω
Thermal resistance, junction-ambient: 62 °C/W
Maximum junction temperature: 150°C
Power dissipation: 76 W
Drain-source breakdown voltage: 600 V
Gate-source voltage: ±20 V static, ±30 V dynamic
Continuous drain current: 51 A
Soldering temperature: 260°C
Package: PG-TO 252-3 (DPAK)
Buy the Infineon Series CFD7 Power Transistor: IPD60R170CFD7
Enhance your power electronics with the Infineon CFD7 Power Transistor, a high-voltage superjunction MOSFET offering excellent efficiency and rugged performance. Designed for soft switching topologies like phase-shift full-bridge and LLC, it reduces gate charge and reverse recovery losses while providing outstanding reliability and power density. This robust device is suitable for server, telecom, and EV charging applications, ensuring optimal performance with easy integration. Purchase online now to benefit from advanced technology tailored for demanding industrial power systems.
Get Infineon CFD7 Power Transistor IPD60R170CFD7 today—built for high efficiency, reliable switching, and industry-leading robustness.
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