The IRFS4410PbF HEXFET Power MOSFET in the TO-262 package offers high efficiency, fast switching, and rugged durability. Designed for high-speed power switching, SMPS, uninterruptible power supplies, and high-frequency circuits, it features a drain-to-source voltage of 100V, continuous drain current of 88A, and low Rds(on) values for minimal power loss. Its avalanche capabilities and thermal stability enable reliable operation in demanding applications, making it ideal for industrial power management and electronic control systems with extended lifespan and enhanced performance.
INFINEON IRFS4410TRLPBF Power MOSFET Specifications:
Drain-to-Source Voltage: 100V
Continuous Drain Current: 88A
Rds(on): 8.0mΩ (typ) at 10V gate
Power Dissipation: 2000 W
Operating Junction Temperature Range: -55°C to +175°C
Gate-to-Source Voltage: ±20V
Avalanche Energy: 220 mJ (single pulse)
Thermal Resistance (Junction to Case): 0.61°C/W
Package: TO-262 (D2Pak)
Lead-Free, RoHS Compliant
Storage Temperature Range: -55°C to +175°C
Soldering Temperature (10 sec): 300°C
Buy the Buy IRFS4410PbF HEXFET Power MOSFET Part Number IRFS4410PbF Online
Order the IRFS4410PbF HEXFET Power MOSFET online today for superior high-speed power switching efficiency, rugged construction, and reliable performance in industrial electronics. Designed for demanding applications like SMPS, uninterruptible power supplies, and high-frequency circuits, this part offers a drain-to-source voltage of 100V and a continuous drain current of 88A. Its low Rds(on) minimizes power loss, ensuring energy efficiency. With excellent avalanche capabilities and thermal stability, it's an ideal choice for engineers seeking durable, high-performance power transistors for advanced electronic systems.
Get IRFS4410PbF HEXFET Power MOSFET today—built for high-speed switching, efficient power management, and long-lasting durability.
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