The IRFP3306PBF is a HEXFET® N-channel Power MOSFET offering high efficiency and ruggedness with improved gate, avalanche, and dynamic dV/dt capabilities. Designed for synchronous rectification in switch-mode power supplies, it excels in high-speed, hard-switched, and high-frequency circuits. Features include fully characterized capacitance, avalanche safe operating area, and enhanced body diode dV/dt and di/dt capability, making it suitable for power management, industrial applications, and demanding electronic systems requiring reliable high-speed switching performance.
Continuous Drain Current (Vge=10V, Tj=25°C): 1600 A
Maximum Power Dissipation: 220 W
Gate Threshold Voltage: 2.0 - 4.0 V
On-Resistance (Vgs=10V, Id=75A): 3.3 - 4.2 mΩ
Gate Charge (Vgs=10V, Id=75A): 85 - 120 nC
Input Capacitance (Vgs=0V): 4520 pF
Output Capacitance (Vds=50V): 500 pF
Reverse Transfer Capacitance: 250 pF
Maximum Junction Temperature: -55°C to +175°C
Thermal Resistance Junction-to-Case: 0.67 °C/W
Case-to-Sink Resistance: 0.24 °C/W
Repetitive Avalanche Energy: 184 mJ
Soldering Temperature (10 sec): 300°C
Mounting Torque: 10 lb-in (1.1 N·m)
Buy the International Series HEXFET Power MOSFET: IRFP3306PBF
Purchase the International IRFP3306PBF Power MOSFET online today and enjoy its robust design, full characterization, and excellent avalanche and switching capabilities. This high-performance device ensures efficient power management for industrial, power supply, and high-frequency switching applications. Its superior ruggedness, low on-resistance, and enhanced diode recovery characteristics make it ideal for demanding electronic systems. Order now to optimize your power circuits with this reliable and efficient HEXFET® power component, and benefit from fast delivery and excellent support.
Buy International IRFP3306PBF now and experience unmatched reliability and high-speed switching performance in power circuits.
Frequently Asked Questions
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